| PART |
Description |
Maker |
| KP024J P0120004P |
1.5W GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| RJK0380DPA-00-J53 RJK0380DPA10 |
45 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
| RJK03F8DNS-00-J5 RJK03F8DNS |
16 A, 30 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03E0DNS-00-J5 |
30 A, 30 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
|
